Elaboration of wide bandgap CIGS on silicon by electrodeposition of stacked metal precursors and sulfur annealing for tandem solar cell applications

Alexandre Crossay (1) , Davide Cammilleri (1) , Angelica Thomere (2) , Bienlo Zerbo (1, 3) , Amelle Rebai (1) , Nicolas Barreau (2) , Daniel Lincot (1)

1 IPVF - Institut Photovoltaïque d’Ile-de-France (UMR)
2 IMN - Institut des Matériaux Jean Rouxel
3 Université Paris-Saclay

A method was developed for the electrodeposition of Cu-In-Ga precursor layers to elaborate Cu(In,Ga)(S,Se) 2 (CIGS) thin films on silicon substrates for future application as silicon/wide-gap CIGS tandem solar cells. An underlayer of Ag was first deposited on silicon substrates to ensure a good adhesion of the electrodeposited stack and to serve as cathode during the deposition process. Cu, In and Ga layers were then sequentially electrodeposited. Ag-Cu-In-Ga precursor layers were finally subjected to elemental sulfur annealing at 600°C. Formation of compact and adherent AgCIGS is observed. X ray diffraction and photoluminescence analyses confirm the formation of wide-gap CIGS of about 1.6 eV, with a spontaneous gallium grading over the depth of the sample leading to the formation of a bi-layer structure with a gallium rich layer at the interface with silicon.

Mots clés: Tandem solar cells; pure sulfide CIGS; silicon; electrodeposition; silver-sulfide

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Alexandre Crossay, Davide Cammilleri, Angelica Thomere, Bienlo Zerbo, Amelle Rebai, et al.. Elaboration of wide bandgap CIGS on silicon by electrodeposition of stacked metal precursors and sulfur annealing for tandem solar cell applications. EPJ Photovoltaics, 2020, 11, pp.11. ⟨10.1051/epjpv/2020008⟩. ⟨hal-03136059⟩