Exploring new convergences between PV technologies for high efficiency tandem solar cells : Wide band gap epitaxial CIGS top cells on silicon bottom cells with III-V intermediate layers

Daniel Lincot (1) , Nicolas Barreau (2) , Ahmed Ben Slimane (1) , Thomas Bidaud (3) , Stéphane Collin (3) , Markus Feifel (4) , Frank Dimroth (4) , Matteo Balestrieri (1) , Damien Coutancier (1) , Solène Béchu (1) , Muriel Bouttemy (5) , Arnaud Etcheberry (5) , Olivier Durand (6) , Marie-Amandine Pinault-Thaury (7) , François Jomard (7)

1 IPVF - Institut Photovoltaïque d’Ile-de-France (UMR)
2 IMN - Institut des Matériaux Jean Rouxel
3 C2N (UMR_9001) - Centre de Nanosciences et Nanotechnologies
4 Fraunhofer ISE - Fraunhofer Institute for Solar Energy Systems
5 ILV - Institut Lavoisier de Versailles
6 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
7 GEMAC - Groupe d'Etude de la Matière Condensée

A new concept is proposed to develop efficient tandem cells based on silicon bottom cells and wide band gap Cu(In,Ga,Al)(S,Se)2 (noted CIGS) top cells. It consists in introducing an epitaxial III-V buffer layer at the interface. The benefit of this configuration is discussed in terms of lattice and band offsets matching between CIGS and III-V's. Selected combinations are proposed, with AlGaAs and GaAlP buffer layers. Preliminary results with CuGaSe2 on various sustrates confirm the influence if the substraqte on the growth of CGS and PV propoerties. Epitacial growth on GaP and possible selective back contact effect with GaAlAs are evidenced. Preliminary results on using advanced characterization methods are presented (quantum efficiency, x-ray diffraction, secondary ion mass spectroscopy, nanoAuger, cathodoluminescence).

Mots clés: Tandem Cell; Epitaxy; CIGS; Silicon (Si)

Domaines: Optique / photonique

Daniel Lincot, Nicolas Barreau, Ahmed Ben Slimane, Thomas Bidaud, Stéphane Collin, et al.. Exploring new convergences between PV technologies for high efficiency tandem solar cells : Wide band gap epitaxial CIGS top cells on silicon bottom cells with III-V intermediate layers. 35th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2018), Sep 2018, Bruxelles, Belgium. pp.23-28, ⟨10.4229/35thEUPVSEC20182018-1AO.2.2⟩. ⟨hal-02289657⟩